SI7431DP-T1-E3 P-Channel 200 V 2.2A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8

Category: Discrete Semiconductor Products, Transistors, FETs, MOSFETs

Single FETs, MOSFETs

Mfr: Vishay Siliconix

Series: TrenchFET®

Packaging: Tape & Reel (TR)

FET Type: P-Channel

Technology: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss): 200 V

Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)

Drive Voltage (Max Rds On, Min Rds On): 6V, 10V

Rds On (Max) @ Id, Vgs: 174mOhm @ 3.8A, 10V

Vgs(th) (Max) @ Id: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V

Vgs (Max): ±20V

FET Feature: -

Power Dissipation (Max): 1.9W (Ta)

Operating Temperature: -55°C ~ 150°C (TJ)

Mounting Type: Surface Mount

Email: fiona@ingkechips.com